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INFLUENCE OF HYDROGEN, ION DISTRIBUTION AND SILYL RADICAL SURFACE DIFFUSION LENGTH ON SILICON THIN FILM GROWTH UNDER HIGH PRESSURE AND HIGH POWER IN VHF-PECVD
WEN, SHUTANG, LU, JINGXIAO, LI, YUXIAO, WANG, HAIYAN, ZHANG, HONGWEI, WEN, LIWEIVolume:
22
Language:
english
Journal:
Modern Physics Letters B
DOI:
10.1142/S021798490801642X
Date:
July, 2008
File:
PDF, 374 KB
english, 2008