Improved thermal stability and electrical properties of...

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 2015 / 01 Vol. 33; Iss. 1

Improved thermal stability and electrical properties of atomic layer deposited HfO2/AlN high-k gate dielectric stacks on GaAs

Cao, Yan-Qiang, Li, Xin, Zhu, Lin, Cao, Zheng-Yi, Wu, Di, Li, Ai-Dong
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Volume:
33
Language:
english
Journal:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
DOI:
10.1116/1.4903367
Date:
January, 2015
File:
PDF, 2.36 MB
english, 2015
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