High-Quality GaAs x P 1- x /In 0.13 Ga 0.87 P Quantum Well Structure Grown on Si Substrate with a Very Few Threading Dislocations
Fujimoto, Yasuhiro, Yonezu, Hiroo, Irino, Satoshi, Samonji, Katsuya, Momose, Kenji, Ohshima, NaokiVolume:
38
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.38.6645
Date:
December, 1999
File:
PDF, 655 KB
english, 1999