Strong Carrier Localization in GaInN/GaN Quantum Dots Grown...

Japanese Journal of Applied Physics 1999 / 12 Vol. 38; Iss. Part 2, No

Strong Carrier Localization in GaInN/GaN Quantum Dots Grown by Molecular Beam Epitaxy

Damilano, Benjamin, Vezian, Stéphane, Grandjean, Nicolas, Massies, Jean
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Volume:
38
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.38.l1357
Date:
December, 1999
File:
PDF, 228 KB
english, 1999
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