Characterization of Highly Strained nFET Device Performance...

Journal of The Electrochemical Society 2010 Vol. 157; Iss. 7

Characterization of Highly Strained nFET Device Performance and Channel Mobility with SMT

Lu, Chih-Cheng, Huang, Jiun-Jia, Luo, Wun-Cheng, Hou, Tuo-Hung, Lei, Tan-Fu
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Volume:
157
Year:
2010
Language:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/1.3416923
File:
PDF, 296 KB
english, 2010
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