Two-Dimensional Analytical Modeling of Fully Depleted...

Japanese Journal of Applied Physics 2009 / 10 Vol. 48; Iss. 10

Two-Dimensional Analytical Modeling of Fully Depleted Short-Channel Dual-Gate Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor

Anvarifard, Mohammad Kazem, Hosseini, Seyed Ebrahim, Armaki, Mahdi Gordi
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Volume:
48
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.48.104501
Date:
October, 2009
File:
PDF, 160 KB
english, 2009
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