Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2014 / 03 Vol. 32; Iss. 2
Study on the effects of proton irradiation on the dc characteristics of AlGaN/GaN high electron mobility transistors with source field plate
Liu, Lu, Hwang, Ya-Hsi, Xi, Yuyin, Ren, Fan, Craciun, Valentin, Pearton, Stephen J., Yang, Gwangseok, Kim, Hong-Yeol, Kim, JihyunVolume:
32
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.4866401
Date:
March, 2014
File:
PDF, 1.83 MB
english, 2014