Strain Effect on Photoluminescences from InGaN MQWs with...

Chinese Physics Letters 2007 / 05 Vol. 24; Iss. 5

Strain Effect on Photoluminescences from InGaN MQWs with Different Barriers Grown by MOCVD

Tong-Jun, Yu, Xiang-Ning, Kang, Yao-Bo, Pan, Zhi-Xin, Qin, Zhi-Zhong, Chen, Zhi-Jian, Yang, Guo-Yi, Zhang
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Volume:
24
Language:
english
Journal:
Chinese Physics Letters
DOI:
10.1088/0256-307X/24/5/066
Date:
May, 2007
File:
PDF, 273 KB
english, 2007
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