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Performance improvement of amorphous indium–gallium–zinc oxide ReRAM with SiO2 inserting layer
Pei, Yanli, Mai, Biaoren, Zhang, Xiaoke, Hu, Ruiqin, Li, Ya, Chen, Zimin, Fan, Bingfeng, Liang, Jun, Wang, GangVolume:
15
Language:
english
Journal:
Current Applied Physics
DOI:
10.1016/j.cap.2015.01.024
Date:
April, 2015
File:
PDF, 840 KB
english, 2015