Performance improvement of amorphous indium–gallium–zinc...

Performance improvement of amorphous indium–gallium–zinc oxide ReRAM with SiO2 inserting layer

Pei, Yanli, Mai, Biaoren, Zhang, Xiaoke, Hu, Ruiqin, Li, Ya, Chen, Zimin, Fan, Bingfeng, Liang, Jun, Wang, Gang
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Volume:
15
Language:
english
Journal:
Current Applied Physics
DOI:
10.1016/j.cap.2015.01.024
Date:
April, 2015
File:
PDF, 840 KB
english, 2015
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