Temperature Dependence of 4H-SiC JBS and Schottky Diodes after High Temperature Treatment of Contact Metal
Pérez, R., Mestres, Narcis, Tournier, Dominique, Jordà, Xavier, Godignon, Phillippe, Vellvehi, MiquelVolume:
483-485
Year:
2005
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.483-485.945
File:
PDF, 263 KB
english, 2005