Analysis of recovery process of neutron-irradiation-induced defects in α-SiC by isothermal annealing up to 1400 °C
Saishun Yamazaki, Kousuke Yamaya, Masamitsu Imai, Toyohiko YanoVolume:
367-370
Year:
2007
Language:
english
Pages:
6
DOI:
10.1016/j.jnucmat.2007.03.095
File:
PDF, 163 KB
english, 2007