Growth of Bulk GaN Single Crystals by the...

Japanese Journal of Applied Physics 2000 / 4 Vol. 39; Iss. Part 1, No

Growth of Bulk GaN Single Crystals by the Pressure-Controlled Solution Growth Method

Inoue, Takayuki, Seki, Yoji, Oda, Osamu, Kurai, Satoshi, Yamada, Yoichi, Taguchi, Tsunemasa
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Volume:
39
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.39.2394
Date:
April, 2000
File:
PDF, 995 KB
english, 2000
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