Improvement of Crystal Quality of RF-Plasma-Assisted...

Japanese Journal of Applied Physics 2000 / 4 Vol. 39; Iss. Part 2, No

Improvement of Crystal Quality of RF-Plasma-Assisted Molecular Beam Epitaxy Grown Ga-Polarity GaN by High-Temperature Grown AlN Multiple Intermediate Layers

Kikuchi, Akihiko, Yamada, Takayuki, Nakamura, Shinichi, Kusakabe, Kazuhide, Sugihara, Daisuke, Kishino, Katsumi
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Volume:
39
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.39.L330
Date:
April, 2000
File:
PDF, 435 KB
english, 2000
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