High-Quality GaN on AlN Multiple Intermediate Layer with...

Japanese Journal of Applied Physics 2000 / 3 Vol. 39; Iss. Part 2, No

High-Quality GaN on AlN Multiple Intermediate Layer with Migration Enhanced Epitaxy by RF-Molecular Beam Epitaxy

Sugihara, Daisuke, Kikuchi, Akihiko, Kusakabe, Kazuhide, Nakamura, Shinichi, Toyoura, Yousuke, Yamada, Takayuki, Kishino, Katsumi
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Volume:
39
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.39.l197
Date:
March, 2000
File:
PDF, 162 KB
english, 2000
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