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Indium Reevaporation during Molecular Beam Epitaxial Growth of InGaAs Layers on GaAs Substrates
Mashita, Masao, Hiyama, Yoshihito, Arai, Kenta, Koo, Bon-Heun, Yao, TakafumiVolume:
39
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.39.4435
Date:
July, 2000
File:
PDF, 58 KB
english, 2000