Effects of GaP Cap Layer Growth on Self-Assembled InAs...

Japanese Journal of Applied Physics 2000 / 6 Vol. 39; Iss. Part 1, No

Effects of GaP Cap Layer Growth on Self-Assembled InAs Islands Grown on GaP (001) by Organometallic Vapor Phase Epitaxy

Fuchi, Shingo, Nonogaki, Youichi, Moriya, Hiromitsu, Fujiwara, Yasufumi, Takeda, Yoshikazu
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Volume:
39
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.39.3290
Date:
June, 2000
File:
PDF, 915 KB
english, 2000
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