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Strain-induced drift of interstitial atoms in SiC implanted with helium ions at elevated temperature
S. Leclerc, M.F. Beaufort, A. Declémy, J.F. BarbotVolume:
397
Year:
2010
Language:
english
Pages:
3
DOI:
10.1016/j.jnucmat.2009.12.011
File:
PDF, 267 KB
english, 2010