Precipitation behavior of Xe at grain boundaries in Si3N4...

Journal of Nuclear Materials 2010 Vol. 397; Iss. 1-3

Precipitation behavior of Xe at grain boundaries in Si3N4 ceramic during implantation at elevated temperature

Yoon-Uk Heo, Masaki Takeguchi, Kazutaka Mitsuishi, Minghui Song, Yoshiko Nakayama, Kazuo Furuya
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Volume:
397
Year:
2010
Language:
english
Pages:
6
DOI:
10.1016/j.jnucmat.2009.12.018
File:
PDF, 842 KB
english, 2010
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