Random Dopant Fluctuation Induced Variability in Undoped...

IEEE Transactions on Electron Devices 2015 / 2 Vol. 62; Iss. 2

Random Dopant Fluctuation Induced Variability in Undoped Channel Si Gate all Around Nanowire n-MOSFET

Nayak, Kaushik, Agarwal, Samarth, Bajaj, Mohit, Murali, Kota V. R. M., Rao, Valipe Ramgopal
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Volume:
62
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2014.2383352
Date:
February, 2015
File:
PDF, 945 KB
english, 2015
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