Thickness uniformity of silicon layers grown from a...

Technical Physics 2014 / 11 Vol. 59; Iss. 11

Thickness uniformity of silicon layers grown from a sublimation source by molecular-beam epitaxy

Boldyrevskii, P. B., Korovin, A. G., Denisov, S. A., Svetlov, S. P., Shengurov, V. G.
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Volume:
59
Language:
english
Journal:
Technical Physics
DOI:
10.1134/S1063784214110073
Date:
November, 2014
File:
PDF, 186 KB
english, 2014
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