High resolution inductively coupled plasma etching of 30 nm...

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures 2000 Vol. 18; Iss. 6

High resolution inductively coupled plasma etching of 30 nm lines and spaces in tungsten and silicon

Goodyear, Andrew L., Mackenzie, Sinclair, Olynick, Deirdre L., Anderson, Erik H.
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Volume:
18
Year:
2000
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.1326922
File:
PDF, 1.07 MB
english, 2000
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