Variation of Lateral Width Technique in SoI High-Voltage...

IEEE Electron Device Letters 2015 / 3 Vol. 36; Iss. 3

Variation of Lateral Width Technique in SoI High-Voltage Lateral Double-Diffused Metal–Oxide–Semiconductor Transistors Using High-k Dielectric

Guo, Yufeng, Yao, Jiafei, Zhang, Bo, Lin, Hong, Zhang, Changchun
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
36
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2015.2393913
Date:
March, 2015
File:
PDF, 365 KB
english, 2015
Conversion to is in progress
Conversion to is failed