A high-capacitance PZT-on-Ta2O5 memory cell with a...

Integrated Ferroelectrics 1992 / 11 Vol. 2; Iss. 1-4

A high-capacitance PZT-on-Ta2O5 memory cell with a chemically stable electrode suitable for sub-micron processing

Azuma, M., Nasu, T., Katsu, S., Otsuki, T., Kano, G.
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Volume:
2
Language:
english
Journal:
Integrated Ferroelectrics
DOI:
10.1080/10584589208215758
Date:
November, 1992
File:
PDF, 1.04 MB
english, 1992
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