The influence of the implantation temperature on the...

Radiation Effects 1980 / 01 Vol. 47; Iss. 1-4

The influence of the implantation temperature on the generation of dislocations in antimony-implanted and annealed silicon

Hofker, W. K., Josquin, W. J. M. J., Oosthoek, D. P., Gijsbers, J. R. M.
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Volume:
47
Language:
english
Journal:
Radiation Effects
DOI:
10.1080/00337578008209208
Date:
January, 1980
File:
PDF, 1.11 MB
english, 1980
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