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Voltage Gain in GaAs-Based Lateral Single-Electron Transistors Having Schottky Wrap Gates
Satoh, Yoshihiro, Okada, Hiroshi, Jinushi, Kei-ichiroh, Fujikura, Hajime, Hasegawa, HidekiVolume:
38
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.38.410
Date:
January, 1999
File:
PDF, 235 KB
english, 1999