InAlN/GaN MOS-HEMT WITH THERMALLY GROWN OXIDE
ALOMARI, M., MEDJDOUB, F., KOHN, E., DI FORTE-POISSON, M-A., DELAGE, S., CARLIN, J.-F., GRANDJEAN, N., GAQUIÈRE, C.Volume:
19
Language:
english
Journal:
International Journal of High Speed Electronics and Systems
DOI:
10.1142/S0129156409006187
Date:
March, 2009
File:
PDF, 1.32 MB
english, 2009