Electron Transport in AlGaN/GaN Heterostructures Grown by...

Japanese Journal of Applied Physics 2000 / 10 Vol. 39; Iss. Part 2, No

Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy

Elsass, Christopher R., Smorchkova, Iolia P., Heying, Ben, Haus, Erik, Poblenz, Christiane, Fini, Paul, Maranowski, Kevin, Petroff, Pierre M., DenBaars, Steven P., Mishra, Umesh K., Speck, James S., S
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Volume:
39
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.39.l1023
Date:
October, 2000
File:
PDF, 68 KB
english, 2000
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