High fT 50-nm-Gate InAlAs/InGaAs High Electron Mobility...

Japanese Journal of Applied Physics 2000 / 8 Vol. 39; Iss. Part 2, No

High fT 50-nm-Gate InAlAs/InGaAs High Electron Mobility Transistors Lattice-Matched to InP Substrates

Yamashita, Yoshimi, Endoh, Akira, Higashiwaki, Masataka, Hikosaka, Kohki, Mimura, Takashi, Hiyamizu, Satoshi, Matsui, Toshiaki
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Volume:
39
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.39.L838
Date:
August, 2000
File:
PDF, 193 KB
english, 2000
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