High hole lifetime (3.8 [micro sign]s) in 4H-SiC diodes...

Electronics Letters 1999 Vol. 35; Iss. 16

High hole lifetime (3.8 [micro sign]s) in 4H-SiC diodes with 5.5 kV blocking voltage

Ivanov, P.A., Levinshtein, M.E., Irvine, K.G., Kordina, O., Palmour, J.W., Rumyantsev, S.L., Singh, R.
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Volume:
35
Year:
1999
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:19990897
File:
PDF, 215 KB
english, 1999
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