Direct Bonding of Epitaxial GaAs Film on Si Substrate with...

Japanese Journal of Applied Physics 2001 / 1 Vol. 40; Iss. Part 2, No

Direct Bonding of Epitaxial GaAs Film on Si Substrate with Improved Optical Properties

Yu, Guolin, Ebisu, Hiroshi, Rahman, Md. Mosaddeq ur, Soga, Tetsuo, Jimbo, Takashi, Umeno, Masayoshi
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Volume:
40
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.40.L59
Date:
January, 2001
File:
PDF, 238 KB
english, 2001
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