![](/img/cover-not-exists.png)
Electrical Characteristics of Ultrashallow p[sup +]∕n Junction Formed by BF[sub 3] Plasma Doping and Two-Step Annealing Process
Lee, Dongkyu, Heo, Sungho, Cho, Changhee, Buh, G. H., Park, Tai-su, Yoo, Jongryeol, Shin, Yugyun, Hwang, HyunsangVolume:
9
Year:
2006
Language:
english
Journal:
Electrochemical and Solid-State Letters
DOI:
10.1149/1.2170461
File:
PDF, 386 KB
english, 2006