Characterization of 100 mm Diameter 4H-Silicon Carbide...

Materials Science Forum 2010 / 4 Vol. 645-648

Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density

Dudley, Michael, Zhang, Ning, Zhang, Yu, Raghothamachar, Balaji, Byrappa, Shayan, Choi, Gloria, Sanchez, Edward K., Hansen, D.M., Drachev, Roman, Loboda, Mark J.
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Volume:
645-648
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.645-648.291
Date:
April, 2010
File:
PDF, 5.39 MB
english, 2010
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