Growth of High-Electron-Mobility InN by RF Molecular Beam...

Japanese Journal of Applied Physics 2001 / 2 Vol. 40; Iss. Part 2, No

Growth of High-Electron-Mobility InN by RF Molecular Beam Epitaxy

Saito, Yoshiki, Teraguchi, Nobuaki, Suzuki, Akira, Araki, Tsutomu, Nanishi, Yasushi
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Volume:
40
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.40.L91
Date:
February, 2001
File:
PDF, 388 KB
english, 2001
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