A comprehensive study of magnetoresistance mobility in short channel transistors: Application to strained and unstrained silicon-on-insulator field-effect transistors
Cassé, M., Rochette, F., Thevenod, L., Bhouri, N., Andrieu, F., Reimbold, G., Boulanger, F., Mouis, M., Ghibaudo, G., Maude, D. K.Volume:
105
Year:
2009
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3097764
File:
PDF, 1.28 MB
english, 2009