Annealing of defect states in reactive ion etched GaN

Journal of Physics and Chemistry of Solids 2008 Vol. 69; Iss. 2-3

Annealing of defect states in reactive ion etched GaN

Wen-How Lan, Kuo-Chin Huang, Kai Feng Huang, Jia-Ching Lin, Yi-Cheng Cheng, Wen-Jen Lin
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Volume:
69
Year:
2008
Language:
english
Pages:
5
DOI:
10.1016/j.jpcs.2007.07.068
File:
PDF, 213 KB
english, 2008
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