Effects of Growth Temperature on Electrical Properties of...

Japanese Journal of Applied Physics 2001 / 5 Vol. 40; Iss. Part 1, No

Effects of Growth Temperature on Electrical Properties of InP-based Pseudomorphic Resonant Tunneling Diodes with Ultrathin Barriers Grown by Molecular Beam Epitaxy

Osaka, Jiro, Matsuzaki, Hideaki
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Volume:
40
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.40.3114
Date:
May, 2001
File:
PDF, 440 KB
english, 2001
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