Influence of Growth Temperature and Thickness of AlGaN Caps...

Japanese Journal of Applied Physics 2001 / 11 Vol. 40; Iss. Part 1, No

Influence of Growth Temperature and Thickness of AlGaN Caps on Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy

Elsass, Christopher R., Poblenz, Christiane, Heying, Ben, Fini, Paul, Petroff, Pierre M., DenBaars, Steven P., Mishra, Umesh K., Speck, James S., Saxler, Adam, Elhamrib, Said, Mitchel, William C.
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Volume:
40
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.40.6235
Date:
November, 2001
File:
PDF, 86 KB
english, 2001
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