Gas-Source Molecular Beam Epitaxy Growth of Metamorphic...

Japanese Journal of Applied Physics 2002 / 2 Vol. 41; Iss. Part 1, No

Gas-Source Molecular Beam Epitaxy Growth of Metamorphic InP/In 0.5 Al 0.5 As/In 0.5 Ga 0.5 As/InAsP High-Electron-Mobility Structures on GaAs Substrates

Ouchi, Kiyoshi, Mishima, Tomoyoshi, Kudo, Makoto, Ohta, Hiroshi
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Volume:
41
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.41.1004
Date:
February, 2002
File:
PDF, 143 KB
english, 2002
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