Molecular Beam Epitaxial Growth and Characterization of...

Japanese Journal of Applied Physics 2002 / 2 Vol. 41; Iss. Part 1, No

Molecular Beam Epitaxial Growth and Characterization of GaAs 1- y Sb y Layers on (111)B InP Substrates

Higashino, Toshiyuki, Kawamura, Yuichi, Fujimoto, Masato, Kondo, Atsushi, Takasaki, Hideki, Inoue, Naohisa
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Volume:
41
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.41.1012
Date:
February, 2002
File:
PDF, 244 KB
english, 2002
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