Composition Control of InGaAsP Laser Structures Using...

Japanese Journal of Applied Physics 2002 / 2 Vol. 41; Iss. Part 1, No

Composition Control of InGaAsP Laser Structures Using In-Situ Emissivity Corrected Pyrometry During Epitaxial Growth

Hoffman, Richard W., Ramer, Jeff, Li, Sherman
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Volume:
41
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.41.996
Date:
February, 2002
File:
PDF, 102 KB
english, 2002
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