Control of N Content of GaPN Grown by Molecular Beam...

Japanese Journal of Applied Physics 2002 / 2 Vol. 41; Iss. Part 1, No

Control of N Content of GaPN Grown by Molecular Beam Epitaxy and Growth of GaPN Lattice Matched to Si(100) Substrate

Furukawa, Yuzo, Yonezu, Hiroo, Ojima, Kaoru, Samonji, Katsuya, Fujimoto, Yasuhiro, Momose, Kenji, Aiki, Kunio
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Volume:
41
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.41.528
Date:
February, 2002
File:
PDF, 213 KB
english, 2002
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