Temperature Effect on AlN/SiO 2...

Japanese Journal of Applied Physics 2002 / 2 Vol. 41; Iss. Part 1, No

Temperature Effect on AlN/SiO 2 Gate pH-Ion-Sensitive Field-Effect Transistor Devices

Chiang, Jung-Lung, Chen, Ying-Chung, Chou, Jung-Chuan, Cheng, Chien-Chuan
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Volume:
41
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.41.541
Date:
February, 2002
File:
PDF, 161 KB
english, 2002
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