High-Power 660-nm-Band AlGaInP Laser Diodes with a Small...

Japanese Journal of Applied Physics 2002 / 2 Vol. 41; Iss. Part 1, No

High-Power 660-nm-Band AlGaInP Laser Diodes with a Small Aspect Ratio for Beam Divergence

Hiroyama, Ryoji, Inoue, Daijiro, Nomura, Yasuhiko, Shono, Masayuki, Sawada, Minoru
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Volume:
41
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.41.1154
Date:
February, 2002
File:
PDF, 115 KB
english, 2002
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