Enhancement-Mode InGaAs/InAlAs/InP High Electon Mobility...

Japanese Journal of Applied Physics 2002 / 2 Vol. 41; Iss. Part 1, No

Enhancement-Mode InGaAs/InAlAs/InP High Electon Mobility Transistor with 0.1 µm Gate

Grundbacher, Ronald, Lai, Richard, Barsky, Michael, Tsai, Roger, Dia, Rosalinda, Chou, Yeong-Chang, Tran, Liem, Cavus, Abdullah, Block, Thomas, Oki, Aaron
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Volume:
41
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.41.1108
Date:
February, 2002
File:
PDF, 116 KB
english, 2002
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