In-Situ Etching of Semiconductor with CBr...

Japanese Journal of Applied Physics 2002 / 2 Vol. 41; Iss. Part 1, No

In-Situ Etching of Semiconductor with CBr 4 in Metalorganic Chemical Vapor Deposition (MOCVD) Reactor

Arakawa, Satoshi, Itoh, Mitsumasa, Kasukawa, Akihiko
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Volume:
41
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.41.1076
Date:
February, 2002
File:
PDF, 90 KB
english, 2002
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