Characteristics of Pr[sub 2]O[sub 3] Gate Dielectric...

Electrochemical and Solid-State Letters 2007 Vol. 10; Iss. 11

Characteristics of Pr[sub 2]O[sub 3] Gate Dielectric Thin-Film Transistors Fabricated on Fluorine-Ion-Implanted Polysilicon Films

Chang, Chia-Wen, Deng, Chih-Kang, Huang, Jiun-Jia, Chang, Hong-Ren, Lei, Tan-Fu
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Volume:
10
Year:
2007
Language:
english
Journal:
Electrochemical and Solid-State Letters
DOI:
10.1149/1.2771081
File:
PDF, 127 KB
english, 2007
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