Ti-mask Selective-Area Growth of GaN by RF-Plasma-Assisted...

Applied Physics Express 2008 / 12 Vol. 1

Ti-mask Selective-Area Growth of GaN by RF-Plasma-Assisted Molecular-Beam Epitaxy for Fabricating Regularly Arranged InGaN/GaN Nanocolumns

Sekiguchi, Hiroto, Kishino, Katsumi, Kikuchi, Akihiko
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Volume:
1
Language:
english
Journal:
Applied Physics Express
DOI:
10.1143/APEX.1.124002
Date:
December, 2008
File:
PDF, 676 KB
english, 2008
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