Diffusion of Point Defects in Silicon Crystals during...

Japanese Journal of Applied Physics 1993 / 4 Vol. 32; Iss. Part 1, No

Diffusion of Point Defects in Silicon Crystals during Melt-Growth. II -One Diffusor Model-

Habu, Ryuichi, Kojima, Kiyoshi, Harada, Hirohumi, Tomiura, Azusa
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Volume:
32
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.32.1747
Date:
April, 1993
File:
PDF, 1.07 MB
1993
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