Semipolar (202¯1) GaN laser diodes operating at 388 nm...

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2014 / 03 Vol. 32; Iss. 2

Semipolar (202¯1) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy

Sawicka, Marta, Muziol, Grzegorz, Turski, Henryk, Feduniewicz-Żmuda, Anna, Kryśko, Marcin, Grzanka, Szymon, Grzanka, Ewa, Smalc-Koziorowska, Julita, Albrecht, Martin, Kucharski, Robert, Perlin, Piotr,
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Volume:
32
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.4865913
Date:
March, 2014
File:
PDF, 2.16 MB
english, 2014
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