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The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on $r$-Plane Sapphire Substrates
Badcock, Tom J., Hao, Rui, Moram, Michelle A., Kappers, Menno J., Dawson, Phil, Humphreys, Colin J.Volume:
50
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.50.080201
Date:
August, 2011
File:
PDF, 422 KB
english, 2011